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GenX3TM 600V IGBT with Diode
High speed PT IGBTs for 40-100 kHz Switching
IXGH30N60C3D1 IXGT30N60C3D1
VCES IC110 VCE(sat) tfi(typ)
= = =
600V 30A 3.0V 47ns
TO-268 (IXGT) Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247) TO-268 TO-247 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1M Continuous Transient TC = 25C TC = 110C TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load @ VCE 600V TC = 25C 220 -55 ... +150 150 -55 ... +150 300 260 1.13/10 4 6 W C C C C C Nm/lb.in g g Features Optimized for low switching losses Square RBSOA Anti-parallel ultra fast diode International standard packages Advantages High power density Low gate drive requirement Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 600 3.5 TJ = 125C 2.6 1.8 5.5 V V Applications High Frequency Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Maximum Ratings 600 600 20 30 60 30 30 150 ICM = 60 V V V V A A A A A G C TO-247(IXGH) G E C (TAB)
E C
( TAB )
G = Gate E = Emitter
= Collector
TAB = Collector
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250A, VGE = 0V = 250A, VCE = VGE
VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC
75 A 1 mA 100 3.0 nA V V
= 20A, VGE = 15V, Note 1 TJ = 125C
(c) 2008 IXYS CORPORATION, All rights reserved
DS100013A(11/08)
IXGH30N60C3D1 IXGT30N60C3D1
Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS IC = 20A, VCE = 10V, Note 1 VCE = 25V, VGE = 0V, f = 1MHz Characteristic Values Min. Typ. Max. 9 30 915 78 32 38 8 17 16 26 0.27 42 47 0.09 17 28 0.44 70 90 0.33 0.21 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.56 C/W C/W TO-268 (IXGT) Outline
IC = 20A, VGE = 15V, VCE = 0.5 * VCES
Inductive load, TJ = 25C IC = 20A, VGE = 15V VCE = 300V, RG = 5
75 0.18
Inductive load, TJ = 125C IC = 20A, VGE = 15V VCE = 300V, RG = 5
(TO-247)
TO-247 AD Outline Reverse Diode (FRED) Symbol VF IRM trr RthJC Test Conditions IF = 30A, VGE = 0V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 2.7 TJ = 150C 1.6 4 100 25 V V A ns ns
e P
IF = 30A, VGE = 0V, -diF/dt = 100A/s, TJ = 100C VR = 100V TJ =100C IF = 1A, -di/dt = 100A/s, VR = 30V
0.9 C/W
Dim.
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGH30N60C3D1 IXGT30N60C3D1
Fig. 1. Output Characteristics @ 25C
40 35 30 VGE = 15V 13V 180 160 140 11V 120 13V VGE = 15V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 7V 9V
100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 9V 11V
7V
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
40 35 30 VGE = 15V 13V 11V 1.1
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V 1.0 I
C
= 40A
VCE(sat) - Normalized
IC - Amperes
25 20 15 10 5 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
9V
0.9
0.8 I 0.7 I
C C
= 20A
0.6 7V 0.5 2.8 3.2 25 50 75
= 10A
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
5.5 TJ = 25C 5.0 70 60 50
Fig. 6. Input Admittance
VCE - Volts
I 4.0
C
= 40A 20A 10A
IC - Amperes
4.5
40 30 20 10 0
TJ = 125C 25C - 40C
3.5
3.0
2.5 7 8 9 10 11 12 13 14 15
5
6
7
8
9
10
11
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH30N60C3D1 IXGT30N60C3D1
Fig. 7. Transconductance
24 22 20 18 25C 125C TJ = - 40C 16 14 12 VCE = 300V I C = 20A I G = 10 mA
Fig. 8. Gate Charge
g f s - Siemens
16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80
VGE - Volts
10 8 6 4 2 0 0 5 10 15 20 25 30 35 40
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 60 50
Fig. 10. Reverse-Bias Safe Operating Area
f = 1 MHz Capacitance - PicoFarads
Cies 1,000
IC - Amperes
40 30 20 TJ = 125C 10 RG = 5 dV / dt < 10V / ns
100
Coes
Cres 10 0 5 10 15 20 25 30 35 40 0 100
200
300
400
500
600
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N60C3(4D)7-25-08
IXGH30N60C3D1 IXGT30N60C3D1
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
0.8 Eoff 0.7 VCE = 300V Eon 1.4 0.6 Eoff 1.2 0.5 VCE = 300V Eon
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
1.2
---
---1.0
TJ = 125C , VGE = 15V
RG = 5 , VGE = 15V
Eoff - MilliJoules
Eoff - MilliJoules
0.6
I
C
= 40A
1.0
0.4 TJ = 125C
0.8
E
E - MilliJoules
on
on
- MilliJoules
0.5
0.8
0.3
0.6
0.4
0.6
0.2 TJ = 25C
0.4
0.3
I C = 20A
0.4
0.1
0.2
0.2 4 6 8 10 12 14 16 18 20
0.2
0.0 10 15 20 25 30 35 40
0.0
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 35 45 55 65 75 85 95 105 115 I C = 20A Eoff VCE = 300V I C = 40A 0.8 0.6 0.4 0.2 0.0 125 Eon 1.4 180 170 1.2 160 1.0 150 140 130 120 110 100 90 80 4
Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance
140
----
tf
VCE = 300V
td(off) - - - -
130 120
RG = 5 , VGE = 15V
TJ = 125C, VGE = 15V
t d(off) - Nanoseconds
t f - Nanoseconds
Eoff - MilliJoules
110 100 I
C
E - MilliJoules
on
= 40A
90 80 70 I
C
= 20A
60 50 40
6
8
10
12
14
16
18
20
TJ - Degrees Centigrade
RG - Ohms
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
180 160 140 110 160 140 120 100
Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature
90
tf
VCE = 300V
td(off) - - - -
RG = 5 , VGE = 15V
100 90
tf
VCE = 300V
td(off) - - - -
RG = 5 , VGE = 15V
80
t d(off) - Nanoseconds
t f - Nanoseconds
120 100 80 60 40 20 0 10 15 20
TJ = 125C
80 70 60 50
t f - Nanoseconds
70 60 I C = 40A, 20A 50 40 30 20 125
t d(off) - Nanoseconds
80 60 40 20 25 35 45 55 65 75 85 95 105 115
TJ = 25C
40 30 20
25
30
35
40
IC - Amperes
TJ - Degrees Centigrade
(c) 2008 IXYS CORPORATION, All rights reserved
IXGH30N60C3D1 IXGT30N60C3D1
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
90 80 70 30 70 60
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
24
tr
VCE = 300V
td(on) - - - -
TJ = 125C, VGE = 15V
28 26 I = 40A 24 22 20 18 16 14
tr
VCE = 300V
td(on) - - - -
RG = 5 , VGE = 15V
22
t d(on) - Nanoseconds
t d(on) - Nanoseconds
t r - Nanoseconds
t r - Nanoseconds
50 40 30 20 10 0 10
20 TJ = 125C 18 TJ = 25C 16 14 12 10
60 50 40 30 20 10 4 6 8 10
C
I
C
= 20A
12
14
16
18
20
15
20
25
30
35
40
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
75 70 65 60 I C = 40A 20 21
t d(on) - Nanoseconds
t r - Nanoseconds
55 50 45 40 35 30 25 20 15 25 35 45 55 65 75 I
C
tr
VCE = 300V
td(on) - - - -
19
RG = 5 , VGE = 15V
18
= 20A
17
16
85
95
105
115
15 125
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS REF: G_30N60C3(4D)7-25-08
IXGH30N60C3D1 IXGT30N60C3D1
60 A 50 IF 40 1000 nC 800 Qr
TVJ= 100C VR = 300V
IRM
30 A 25 20 15 10
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ=150C
30 20
600
TVJ=100C
IF= 60A IF= 30A IF= 15A
400
TVJ=25C
10 0
200
5 0
0
1
2 VF
3V
0 100
A/s 1000 -diF/dt
0
200
400
600 A/s 1000 800 -diF/dt
Fig. 21. Forward current IF versus VF
2.0
Fig. 22. Reverse recovery charge Qr versus -diF/dt
90 ns
Fig. 23. Peak reverse current IRM versus -diF/dt
20 V V FR 15
TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A
TVJ= 100C IF = 30A tfr VFR
1.00 tfr 0.75 s
1.5 Kf 1.0
trr 80
10
0.50
IRM
70 0.5
Qr
5
0.25
0.0
0
40
80
120 C 160 T VJ
60
0
200
400
600 -diF/dt
800 A/s
1000
0
0
200
400
0.00 600 A/s 1000 800 diF/dt
Fig. 24. Dynamic parameters Qr, IRM versus TVJ
1 K/W
Fig. 25. Recovery time trr versus -diF/dt
Fig. 26. Peak forward voltage VFR and tfr versus diF/dt
Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162
0.1 Z thJC
1 2 3
0.01
0.001 0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
t
s
1
Fig. 27. Transient thermal resistance junction to case
(c) 2008 IXYS CORPORATION, All rights reserved

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